Abstract

This paper presents the optical wireless converged network designs and frameworks that leverage the benefits of both optical and wireless networks to ensure future wireless networks reach their full potential, without transport network becoming the bottleneck.

Abstract

Integrated blue-violet and blue-green micro-LED arrays, fabricated via a transfer printing method, were employed to demonstrate wavelength division multiplexing underwater data transmission at 100 Mb/s over up to 9 attenuation lengths in a 1.5 m long water tank.

Abstract

This talk will describe nanowire-mediated formation of microLEDs via controlled reshaping of ternary InGaN pyramids yielding c-oriented InGaN-platelet microLEDs emitting all three RGB-colors. I will also describe recent progress in the self-formation of atomically smooth and dislocation-free hexagonal prism structures acting as photonic cavity structures.

Abstract

We present a tracking and alignment capability for use in mask-less lithography systems. Through the use of micropixellated light emitting diode (LED) arrays, fluorescent clusters can be identified and used as alignment markers at micrometer scale.

Abstract

We utilize a rate equation approach and RF measurement technique to study carrier dynamics in InGaN/GaN LEDs. Study of carrier dynamics aids in understanding efficiency challenges and design of high-speed, efficient micro-LEDs for visible-light communication and micro-LED display applications.

Abstract

A high-sensitivity and a high-power photo-receiver is preferred in coherent lidar system. In this work, we demonstrate top-illuminated APDs, which can simultaneously exhibit low excess noise (k<0.1) and wide 3-dB bandwidth (14GHz) with high responsivity (6.7A/W) under the operation at saturation output (3 mA).

Abstract

Superior performance of digital alloy APDs is attributed to the formation of "minigaps" in the material bandstructure. However, no improvement is observed in dilute nitride APDs in presence of minigaps. We propose criteria which can judge the effectiveness of these minigaps.

Abstract

A previously reported CMOS-compatible dual avalanche photodiode design is exploited to develop a maximum-likelihood spectral-sensing algorithm, which maps the dual photocurrents to the monochromatic light’s wavelength. Optimization over the reverse biases of the two APDs yields a spectral resolution of 10 nm within 440-650 nm.

Abstract

Avalanche photodiodes are fabricated and characterized, using a single diffusion fabrication process with the surface patterned by selective area growth prior to diffusion. Raster mapping of the photocurrent near the breakdown voltage is used to characterize the electric field distribution in the multiplication layer.

Abstract

We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for PON applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model of surface state charge accumulation under optical stress is presented.

Abstract

In this work, low frequency noise spectroscopy and temperature varied photoluminescence was used to characterize the defect levels in InGaAsBi photodetector. Both of these independent techniques have found some deep levels, and some of which are the consistent.

Abstract