D. Feezell (US) Center for High Technology Materials (CHTM), University of New Mexico
Center for High Technology Materials (CHTM), University of New MexicoAuthor Of 1 Presentation
(SS ML) Special Symposium on Micro LED
WA3.2 - CARRIER DYNAMICS IN INGAN/GAN MICRO-LEDS: AN RF APPRAOCH TO UNDERSTAND EFFICIENCY ISSUES
Presentation Type
Contributed Submission
Authors
- A. Rashidi (US) Center for High Technology Materials (CHTM), University of New Mexico
- M. Monavarian (US) Center for High Technology Materials (CHTM), University of New Mexico
- A. Aragon (US) Center for High Technology Materials (CHTM), University of New Mexico
- A. Rishinaramangalam (US) Center for High Technology Materials (CHTM), University of New Mexico
- D. Feezell (US) Center for High Technology Materials (CHTM), University of New Mexico
Date
10/02/2019
Time
01:30 PM - 02:45 PM
Room
El Mirador A
Duration
15 Minutes
Lecture Time
01:45 PM - 02:00 PM
Abstract
Abstract
We utilize a rate equation approach and RF measurement technique to study carrier dynamics in InGaN/GaN LEDs. Study of carrier dynamics aids in understanding efficiency challenges and design of high-speed, efficient micro-LEDs for visible-light communication and micro-LED display applications.