J. Huang (US) Source Photonics
Source PhotonicsAuthor Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
TuE1.5 - HIGH-SPEED INGAAS/INALAS SACM AVALANCHE PHOTODIODES WITH ROBUST OPTICAL & ELECTRICAL OVERLOAD
Presentation Type
Contributed Submission
Authors
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:30 AM - 09:45 AM
Abstract
Abstract
We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for PON applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model of surface state charge accumulation under optical stress is presented.
Presenter Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
TuE1.5 - HIGH-SPEED INGAAS/INALAS SACM AVALANCHE PHOTODIODES WITH ROBUST OPTICAL & ELECTRICAL OVERLOAD
Presentation Type
Contributed Submission
Authors
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:30 AM - 09:45 AM
Abstract
Abstract
We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for PON applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model of surface state charge accumulation under optical stress is presented.