J. Shi (TW) Electrical Engineering Dept., National Central University

Electrical Engineering Dept., National Central University

Author Of 4 Presentations

 Conference Calendar
(PSSI) Photodetectors, Sensors, Systems and Imaging

MC4.2 - TYPE-II HYBRID ABSORBER UTC-PDS WITH ENHANCED SPEED AND RESPONSIVITY PERFORMANCES ACROSS 1.3 TO 1.55 μm WAVELENGTHS

Presentation Type
Contributed Submission
Authors
Date
09/30/2019
Time
03:30 PM - 05:00 PM
Room
El Mirador C East
Duration
15 Minutes
Lecture Time
03:45 PM - 04:00 PM

Abstract

Abstract

Using type-II GaAs0.5Sb0.5/In0.53Ga0.47As hybrid absorber in UTC-PD, significant enhancement (16.7%) in responsivity across 1.31-1.55μm wavelength is achieved. With top-illuminated structure and large active mesa (25μm), such device exhibits >40(33) GHz O-E bandwidths, good responsivities (0.53 (0.7)A/W), and high saturation currents (>5mA) under 1.55 (1.31)μm wavelength.

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(PIP) Photonic Integration and Packaging

MD3.2 - High-Speed Electro-Absorption Modulated Laser at 1.3 µm wavelength Based on Selective Area Growth Technique

Presentation Type
Contributed Submission
Authors
Date
09/30/2019
Time
01:30 PM - 03:00 PM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM

Abstract

Abstract

We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.

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(PSSI) Photodetectors, Sensors, Systems and Imaging

TuE1.1 - HIGH-SPEED AND WIDE DYNAMIC RANGE AVALANCHE PHOTODIODE FOR COHERENT LIDAR APPLICATION

Presentation Type
Contributed Submission
Authors
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
08:30 AM - 08:45 AM

Abstract

Abstract

A high-sensitivity and a high-power photo-receiver is preferred in coherent lidar system. In this work, we demonstrate top-illuminated APDs, which can simultaneously exhibit low excess noise (k<0.1) and wide 3-dB bandwidth (14GHz) with high responsivity (6.7A/W) under the operation at saturation output (3 mA).

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(SL) Semiconductor Lasers

WP1 - High-Power and Highly Single-Mode Zn-Diffusion VCSELs at 940 nm Wavelength

Presentation Type
Contributed Submission
Authors
Date
10/02/2019
Time
06:00 PM - 08:00 PM
Room
El Mirador B/C
Lecture Time
06:00 PM - 06:00 PM

Abstract

Abstract

We demonstrate Zn-diffusion 940 nm VCSELs, which exhibits high-power (6.8 mW), highly single-mode (SMSR>50 dB) performances over the full range of bias currents. A wide -3-dB E-O bandwidth (18 GHz) and a short rise/fall time (20/11 ps) can also be achieved simultaneously.

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