M. Tran (US) University of California, Santa Barbara
University of California, Santa BarbaraAuthor Of 2 Presentations
(PIP) Photonic Integration and Packaging
MD1.4 - O-BAND QUANTUM DOT SEMICONDUCTOR OPTICAL AMPLIFIER DIRECTLY GROWN ON CMOS COMPATIBLE SI SUBSTRATE
Presentation Type
Contributed Submission
Authors
- S. Liu (US) University of California, Santa Barbara
- J. Norman (US) University of California, Santa Barbara
- M. Dumont (US) University of California, Santa Barbara
- P. Pintus (US) University of California, Santa Barbara
- M. Tran (US) University of California, Santa Barbara
- D. Jung (US) University of California, Santa Barbara
- A. Torres (US) University of California, Santa Barbara
- A. Gossard (US) University of California, Santa Barbara
- J. Bowers (US)
Date
09/30/2019
Time
08:30 AM - 10:00 AM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
09:30 AM - 09:45 AM
Abstract
Abstract
We report the O-band QD-SOA that is directly grown on CMOS compatible silicon substrate. The QD-SOA has a length of 3600 μm, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
(SL) Semiconductor Lasers
TuG2.1 - HIGH-POWER, ULTRA-LOW NOISE SEMICONDUCTOR LASERS
Presentation Type
Invited Submission
Authors
- P. Morton (US) Morton Photonics Inc.
- M. Morton (US) Morton Photonics
- M. Tran (US) University of California, Santa Barbara
- D. Huang (US) University of California, Santa Barbara
- C. Xiang (US) University of California, Santa Barbara
- C. Morton (US) Morton Photonics
- J. Khurgin (US) Johns Hopkins
- J. Bowers (US)
Date
10/01/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
30 Minutes
Lecture Time
10:30 AM - 11:00 AM
Abstract
Abstract
We describe fixed wavelength ‘Extended Distributed Bragg Reflector’ (E-DBR) lasers and ultra-wideband ‘Integrated Coherent Tunable Lasers’ (ICTLs) with ultra-low noise operation. Discrete E-DBR lasers provide 15 Hz Lorentzian linewidth, -165dBc/Hz RIN, and >100mW power, initial ICTLs providing record 110nm tuning range and <200Hz Lorentzian linewidth.