M. Tran (US) University of California, Santa Barbara

University of California, Santa Barbara

Author Of 2 Presentations

MD1.4 - O-BAND QUANTUM DOT SEMICONDUCTOR OPTICAL AMPLIFIER DIRECTLY GROWN ON CMOS COMPATIBLE SI SUBSTRATE

Abstract

Abstract

We report the O-band QD-SOA that is directly grown on CMOS compatible silicon substrate. The QD-SOA has a length of 3600 μm, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.

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TuG2.1 - HIGH-POWER, ULTRA-LOW NOISE SEMICONDUCTOR LASERS

Abstract

Abstract

We describe fixed wavelength ‘Extended Distributed Bragg Reflector’ (E-DBR) lasers and ultra-wideband ‘Integrated Coherent Tunable Lasers’ (ICTLs) with ultra-low noise operation. Discrete E-DBR lasers provide 15 Hz Lorentzian linewidth, -165dBc/Hz RIN, and >100mW power, initial ICTLs providing record 110nm tuning range and <200Hz Lorentzian linewidth.

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