J. Bowers (US)
Author Of 4 Presentations
MD1.4 - O-BAND QUANTUM DOT SEMICONDUCTOR OPTICAL AMPLIFIER DIRECTLY GROWN ON CMOS COMPATIBLE SI SUBSTRATE
- S. Liu (US) University of California, Santa Barbara
- J. Norman (US) University of California, Santa Barbara
- M. Dumont (US) University of California, Santa Barbara
- P. Pintus (US) University of California, Santa Barbara
- M. Tran (US) University of California, Santa Barbara
- D. Jung (US) University of California, Santa Barbara
- A. Torres (US) University of California, Santa Barbara
- A. Gossard (US) University of California, Santa Barbara
- J. Bowers (US)
Abstract
Abstract
We report the O-band QD-SOA that is directly grown on CMOS compatible silicon substrate. The QD-SOA has a length of 3600 μm, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
TuG1.4 - IMPROVING RELIABILITY OF INAS QUANTUM DOT LASERS ON SILICON SUBSTRATES
- J. Selvidge (US) UC Santa Barbara Materials
- J. Norman (US) University of California, Santa Barbara
- D. Jung (US) University of California, Santa Barbara
- E. Hughes (US) University of California, Santa Barbara
- M. Salmon (US) EAG Laboratories-Eurofins Materials Science
- J. Bowers (US)
- R. Herrick (US) Intel Corporation
- K. Mukherjee (US) UC Santa Barbara Materials
Abstract
Abstract
Using correlated electron microscopy techniques, we characterize optoelectronic and structural properties of dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate of recombination enhanced dislocation climb slows noticeably during the aging process from quantum well structures.
TuG2.1 - HIGH-POWER, ULTRA-LOW NOISE SEMICONDUCTOR LASERS
- P. Morton (US) Morton Photonics Inc.
- M. Morton (US) Morton Photonics
- M. Tran (US) University of California, Santa Barbara
- D. Huang (US) University of California, Santa Barbara
- C. Xiang (US) University of California, Santa Barbara
- C. Morton (US) Morton Photonics
- J. Khurgin (US) Johns Hopkins
- J. Bowers (US)
Abstract
Abstract
We describe fixed wavelength ‘Extended Distributed Bragg Reflector’ (E-DBR) lasers and ultra-wideband ‘Integrated Coherent Tunable Lasers’ (ICTLs) with ultra-low noise operation. Discrete E-DBR lasers provide 15 Hz Lorentzian linewidth, -165dBc/Hz RIN, and >100mW power, initial ICTLs providing record 110nm tuning range and <200Hz Lorentzian linewidth.
WB3.3 - A SPECTRALLY-PARTITIONED CROSSBAR SWITCH WITH THREE DROPS PER CROSS-POINT CONTROLLED WITH A DRIVER
- T. Hirokawa (US) University of California Santa Barbara
- M. Saeidi (US) University of California Santa Barbara
- A. Maharry (US) UC Santa Barbara
- R. Helkey (US) University of California Santa Barbara
- J. Bowers (US)
- L. Theogarajan (US) University of California Santa Barbara
- A. Saleh (US) University of California Santa Barbara
- C. Schow (US) UC Santa Barbara
Abstract
Abstract
We present the theory and realization of a spectrally-partitioned 4x4 crossbar switch, with three microring resonators per cross-point having disjoint resonance regions within a free spectral range. This demonstration of the switch includes a driver. We describe an associated energy efficient, non-blocking wavelength assignment algorithm.