J. Norman (US) University of California, Santa Barbara

University of California, Santa Barbara

Author Of 2 Presentations

MD1.4 - O-BAND QUANTUM DOT SEMICONDUCTOR OPTICAL AMPLIFIER DIRECTLY GROWN ON CMOS COMPATIBLE SI SUBSTRATE

Abstract

Abstract

We report the O-band QD-SOA that is directly grown on CMOS compatible silicon substrate. The QD-SOA has a length of 3600 μm, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.

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TuG1.4 - IMPROVING RELIABILITY OF INAS QUANTUM DOT LASERS ON SILICON SUBSTRATES

Abstract

Abstract

Using correlated electron microscopy techniques, we characterize optoelectronic and structural properties of dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate of recombination enhanced dislocation climb slows noticeably during the aging process from quantum well structures.

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