J. Norman (US) University of California, Santa Barbara
University of California, Santa BarbaraAuthor Of 2 Presentations
(PIP) Photonic Integration and Packaging
MD1.4 - O-BAND QUANTUM DOT SEMICONDUCTOR OPTICAL AMPLIFIER DIRECTLY GROWN ON CMOS COMPATIBLE SI SUBSTRATE
Presentation Type
Contributed Submission
Authors
- S. Liu (US) University of California, Santa Barbara
- J. Norman (US) University of California, Santa Barbara
- M. Dumont (US) University of California, Santa Barbara
- P. Pintus (US) University of California, Santa Barbara
- M. Tran (US) University of California, Santa Barbara
- D. Jung (US) University of California, Santa Barbara
- A. Torres (US) University of California, Santa Barbara
- A. Gossard (US) University of California, Santa Barbara
- J. Bowers (US)
Date
09/30/2019
Time
08:30 AM - 10:00 AM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
09:30 AM - 09:45 AM
Abstract
Abstract
We report the O-band QD-SOA that is directly grown on CMOS compatible silicon substrate. The QD-SOA has a length of 3600 μm, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
(SL) Semiconductor Lasers
TuG1.4 - IMPROVING RELIABILITY OF INAS QUANTUM DOT LASERS ON SILICON SUBSTRATES
Presentation Type
Contributed Submission
Authors
- J. Selvidge (US) UC Santa Barbara Materials
- J. Norman (US) University of California, Santa Barbara
- D. Jung (US) University of California, Santa Barbara
- E. Hughes (US) University of California, Santa Barbara
- M. Salmon (US) EAG Laboratories-Eurofins Materials Science
- J. Bowers (US)
- R. Herrick (US) Intel Corporation
- K. Mukherjee (US) UC Santa Barbara Materials
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
09:30 AM - 09:45 AM
Abstract
Abstract
Using correlated electron microscopy techniques, we characterize optoelectronic and structural properties of dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate of recombination enhanced dislocation climb slows noticeably during the aging process from quantum well structures.