(SL) Semiconductor Lasers
  • P. Morton (US) Morton Photonics Inc.

TuG2.1 - HIGH-POWER, ULTRA-LOW NOISE SEMICONDUCTOR LASERS

Presentation Type
Invited Submission
Authors
  • P. Morton (US) Morton Photonics Inc.
  • M. Morton (US) Morton Photonics
  • M. Tran (US) University of California, Santa Barbara
  • D. Huang (US) University of California, Santa Barbara
  • C. Xiang (US) University of California, Santa Barbara
  • C. Morton (US) Morton Photonics
  • J. Khurgin (US) Johns Hopkins
  • J. Bowers (US)
Date
10/01/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
30 Minutes
Lecture Time
10:30 AM - 11:00 AM

Abstract

Abstract

We describe fixed wavelength ‘Extended Distributed Bragg Reflector’ (E-DBR) lasers and ultra-wideband ‘Integrated Coherent Tunable Lasers’ (ICTLs) with ultra-low noise operation. Discrete E-DBR lasers provide 15 Hz Lorentzian linewidth, -165dBc/Hz RIN, and >100mW power, initial ICTLs providing record 110nm tuning range and <200Hz Lorentzian linewidth.

Collapse