K. LAU (HK) Hong Kong University of Science and Technology
Hong Kong University of Science and TechnologyAuthor Of 2 Presentations
(SL) Semiconductor Lasers
WG2.3 - MONOLITHIC GROWTH OF INAS QUANTUM DOTS LASERS ON (001) SILICON EMITTING AT 1.55 ΜM
Presentation Type
Contributed Submission
Authors
- Z. Li (GB) Cardiff University
- S. Shutts (GB) Cardiff University
- C. Allford (GB) Cardiff University
- B. Shi (HK) Hong Kong University of Science and Technology
- W. LUO (CN) Hong Kong University of Science and Technology
- K. LAU (HK) Hong Kong University of Science and Technology
- P. Smowton (GB) Cardiff University
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
11:15 AM - 11:30 AM
Abstract
Abstract
Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials’ optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.
(SL) Semiconductor Lasers
WP16 - CHARACTERISTICS OF 1.3ΜM ELECTRICALLY PUMPED INAS/ALGAINAS QUANTUM DOT LASERS ON (001) SILICON
Presentation Type
Contributed Submission
Authors
- Y. XUE (CN) Hong Kong University of Science and Technology
- W. LUO (CN) Hong Kong University of Science and Technology
- X. WU (HK) Chinese University of Hong Kong
- S. ZHU (HK) Hong Kong University of Science and Technology
- K. LAU (HK) Hong Kong University of Science and Technology
- H. Tsang (HK) Chinese University of Hong Kong
Date
10/02/2019
Time
06:00 PM - 08:00 PM
Room
El Mirador B/C
Lecture Time
06:00 PM - 06:00 PM
Abstract
Abstract
We present preliminary characterization results of the first InAs/InAlGaAs/InP 1.3μm quantum dots (QDs) laser directly grown on (001) silicon. A threshold current density of 1.05 kA/cm2 under pulsed current injection has been obtained. A 50 ns width optical pulse was observed under gain-switching measurement.