C. Allford (GB) Cardiff University
Cardiff UniversityAuthor Of 2 Presentations
(SL) Semiconductor Lasers
TuD1.3 - INP QUANTUM DOT MODE-LOCKED LASERS AND MATERIALS STUDIES
Presentation Type
Contributed Submission
Authors
Date
10/01/2019
Time
08:30 AM - 09:45 AM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
09:15 AM - 09:30 AM
Abstract
Abstract
InP/GaInP quantum dot laser structures exhibiting broad optical gain spectra suitable for mode-locking have been demonstrated. Two-section narrow ridge passive mode-locked lasers were fabricated from this material. Mode-locking conditions have been investigated for devices with different cavity lengths, with maximum frequency of 15.21 GHz.
(SL) Semiconductor Lasers
WG2.3 - MONOLITHIC GROWTH OF INAS QUANTUM DOTS LASERS ON (001) SILICON EMITTING AT 1.55 ΜM
Presentation Type
Contributed Submission
Authors
- Z. Li (GB) Cardiff University
- S. Shutts (GB) Cardiff University
- C. Allford (GB) Cardiff University
- B. Shi (HK) Hong Kong University of Science and Technology
- W. LUO (CN) Hong Kong University of Science and Technology
- K. LAU (HK) Hong Kong University of Science and Technology
- P. Smowton (GB) Cardiff University
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
11:15 AM - 11:30 AM
Abstract
Abstract
Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials’ optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.