X. WU (HK) Chinese University of Hong Kong
Chinese University of Hong KongAuthor Of 1 Presentation
(SL) Semiconductor Lasers
WP16 - CHARACTERISTICS OF 1.3ΜM ELECTRICALLY PUMPED INAS/ALGAINAS QUANTUM DOT LASERS ON (001) SILICON
Presentation Type
Contributed Submission
Authors
- Y. XUE (CN) Hong Kong University of Science and Technology
- W. LUO (CN) Hong Kong University of Science and Technology
- X. WU (HK) Chinese University of Hong Kong
- S. ZHU (HK) Hong Kong University of Science and Technology
- K. LAU (HK) Hong Kong University of Science and Technology
- H. Tsang (HK) Chinese University of Hong Kong
Date
10/02/2019
Time
06:00 PM - 08:00 PM
Room
El Mirador B/C
Lecture Time
06:00 PM - 06:00 PM
Abstract
Abstract
We present preliminary characterization results of the first InAs/InAlGaAs/InP 1.3μm quantum dots (QDs) laser directly grown on (001) silicon. A threshold current density of 1.05 kA/cm2 under pulsed current injection has been obtained. A 50 ns width optical pulse was observed under gain-switching measurement.