(SL) Semiconductor Lasers
  • Z. Li (GB) Cardiff University

WG2.3 - MONOLITHIC GROWTH OF INAS QUANTUM DOTS LASERS ON (001) SILICON EMITTING AT 1.55 ΜM

Presentation Type
Contributed Submission
Authors
  • Z. Li (GB) Cardiff University
  • S. Shutts (GB) Cardiff University
  • C. Allford (GB) Cardiff University
  • B. Shi (HK) Hong Kong University of Science and Technology
  • W. LUO (CN) Hong Kong University of Science and Technology
  • K. LAU (HK) Hong Kong University of Science and Technology
  • P. Smowton (GB) Cardiff University
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
11:15 AM - 11:30 AM

Abstract

Abstract

Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials’ optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.

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