TuD1.1 - DIGITAL ALLOY AVALANCHE PHOTODIODES
Abstract
Abstract
Recently, using AlxIn1-xAsySb1-y grown as a digital alloy we have demonstrated APDs with noise as low as Si at telecommunication wavelengths (1300 nm to 1550 nm). In this paper, we a noise suppression mechanism in digital alloys.
TuD1.2 - COMPARISON STUDY OF HIGH-TEMPERATURE SPONTANEOUS EMISSION QUANTUM EFFICIENCY OF COMMERCIAL LED MATERIALS
- S. Madhusoodhanan (US) Department of Electrical Engineering, University of Arkansas,
- A. Sabbar (US) Mr
- S. Al-Kabi (US) Department of Electrical Engineering, University of Arkansas,
- B. Dong (CN) 2HC SemiTek (Suzhou), 28 Chenfeng Road, Zhangjiagang, Jiangsu, P. R. 215600, China
- J. Wang (CN) 2HC SemiTek (Suzhou), 28 Chenfeng Road, Zhangjiagang, Jiangsu, P. R. 215600, China
- S. Atcitty (US) 3Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- R. Kaplar (US) Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- H. Mantooth (US) Department of Electrical Engineering, University of Arkansas,
- S. Yu (US) Department of Electrical Engineering, University of Arkansas,
- Z. Chen (US) Department of Electrical Engineering, University of Arkansas,
Abstract
Abstract
The spontaneous emission quantum efficiency (QE) of InGaN/GaN MQWs with different wavelengths was studied using photoluminescence (PL) spectroscopy. The QE was calculated in rnage from the power-law relation linking the integrated PL and the excitation pumping
TuD1.3 - INP QUANTUM DOT MODE-LOCKED LASERS AND MATERIALS STUDIES
Abstract
Abstract
InP/GaInP quantum dot laser structures exhibiting broad optical gain spectra suitable for mode-locking have been demonstrated. Two-section narrow ridge passive mode-locked lasers were fabricated from this material. Mode-locking conditions have been investigated for devices with different cavity lengths, with maximum frequency of 15.21 GHz.
TuD1.4 - ENGINEERING MONOCLINIC (AL,IN,GA)2O3 FOR ULTRAVIOLET PHOTODETECTOR
Abstract
Abstract
First-principle analysis of the electronic properties of quaternary β-(AlxInyGa1-x-y)2O3 alloys with Al-content and In-content ranging from 0~18.75% were performed, and the findings showed the potential of using β-(AlxInyGa1-x-y)2O3 and Ga2O3 alloys to achieve lattice-match condition for deep ultraviolet photodetector.