(PMM) Photonic Materials and Metamaterials
  • A. Sabbar (US) Mr

TuD1.2 - COMPARISON STUDY OF HIGH-TEMPERATURE SPONTANEOUS EMISSION QUANTUM EFFICIENCY OF COMMERCIAL LED MATERIALS

Presentation Type
Contributed Submission
Authors
  • S. Madhusoodhanan (US) Department of Electrical Engineering, University of Arkansas,
  • A. Sabbar (US) Mr
  • S. Al-Kabi (US) Department of Electrical Engineering, University of Arkansas,
  • B. Dong (CN) 2HC SemiTek (Suzhou), 28 Chenfeng Road, Zhangjiagang, Jiangsu, P. R. 215600, China
  • J. Wang (CN) 2HC SemiTek (Suzhou), 28 Chenfeng Road, Zhangjiagang, Jiangsu, P. R. 215600, China
  • S. Atcitty (US) 3Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • R. Kaplar (US) Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • H. Mantooth (US) Department of Electrical Engineering, University of Arkansas,
  • S. Yu (US) Department of Electrical Engineering, University of Arkansas,
  • Z. Chen (US) Department of Electrical Engineering, University of Arkansas,
Date
10/01/2019
Time
08:30 AM - 09:45 AM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
09:00 AM - 09:15 AM

Abstract

Abstract

The spontaneous emission quantum efficiency (QE) of InGaN/GaN MQWs with different wavelengths was studied using photoluminescence (PL) spectroscopy. The QE was calculated in rnage from the power-law relation linking the integrated PL and the excitation pumping

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