C. Tan (US) Clarkson University
Clarkson UniversityAuthor Of 3 Presentations
TuD1.4 - ENGINEERING MONOCLINIC (AL,IN,GA)2O3 FOR ULTRAVIOLET PHOTODETECTOR
Abstract
Abstract
First-principle analysis of the electronic properties of quaternary β-(AlxInyGa1-x-y)2O3 alloys with Al-content and In-content ranging from 0~18.75% were performed, and the findings showed the potential of using β-(AlxInyGa1-x-y)2O3 and Ga2O3 alloys to achieve lattice-match condition for deep ultraviolet photodetector.
TuG3.2 - ENGINEERING DILUTE-ANION III-NITRIDE FOR LIGHT EMITTERS
Abstract
Abstract
Electronic and optical properties of dilute-anion III-Nitride semiconductors have been investigated and analyzed in recent years, and the findings indicated a strong potential of using dilute-anion III-Nitride materials as a solution towards high efficiency light emitters covering deep ultraviolet and visible light spectral regime.
TuG3.3 - INVESTIGATION OF BAND ANTICROSSING PARAMETERS FOR DILUTE-ANION III-NITRIDE ALLOYS
Abstract
Abstract
Band anticrossing parameters of dilute-anion III-nitride alloys are calculated for GaNAs, GaNP, and introduced for dilute-anion AlN alloy material systems. Incorporation of small amount of the dilute-anion in III-nitrides allows for a wide tunability of the band gap and electronic properties of the resultant alloys.
Presenter Of 1 Presentation
TuG3.2 - ENGINEERING DILUTE-ANION III-NITRIDE FOR LIGHT EMITTERS
Abstract
Abstract
Electronic and optical properties of dilute-anion III-Nitride semiconductors have been investigated and analyzed in recent years, and the findings indicated a strong potential of using dilute-anion III-Nitride materials as a solution towards high efficiency light emitters covering deep ultraviolet and visible light spectral regime.