Displaying One Session

10/02/2019 01:30 PM - 03:00 PM La Vista D/E
Time
01:30 PM - 03:00 PM
(SL) Semiconductor Lasers

WG3.2 - FREQUENCY MODULATED COMBS IN SEMICONDUCTOR LASERS

Abstract

Abstract

While frequency combs are mostly connected to short pulse emission, it is not the only way to generate a comb. Quantum or interband cascade lasers for example show a completely different behavior. Here, we give an overview of this exciting phenomena including theory and experiments.

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WG3.3 - DIRECT SEMICONDUCTOR DIODE LASER MODE ENGINEERING AND WAVEGUIDE DESIGN

Presentation Type
Contributed Submission
Date
10/02/2019
Time
01:30 PM - 03:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM

Abstract

Abstract

Starting from the desired modal field we solve for the supporting waveguide refractive index structure within a semiconductor diode laser. Specifically we analyze the problem of maximizing far-field on-axis intensity and discuss the practical aspects of waveguide design.

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WG3.4 - LINEWIDTH BROADENING FACTOR OF AN INTERBAND CASCADE LASER OPERATED ABOVE THRESHOLD

Presentation Type
Contributed Submission
Date
10/02/2019
Time
01:30 PM - 03:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
02:45 PM - 03:00 PM

Abstract

Abstract

We show that the linewidth broadening factor of a mid-infrared interband cascade laser operated above the lasing threshold is around 2.0, which does not increase with increasing pump current. The linewidth broadening factor is extracted from the self-mixing interferometry technique.

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