J. Goodrich (US) Lehigh University

Lehigh University

Author Of 2 Presentations

 Conference Calendar
(SL) Semiconductor Lasers

TuG3.3 - INVESTIGATION OF BAND ANTICROSSING PARAMETERS FOR DILUTE-ANION III-NITRIDE ALLOYS

Presentation Type
Contributed Submission
Authors
Date
10/01/2019
Time
01:30 PM - 02:45 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM

Abstract

Abstract

Band anticrossing parameters of dilute-anion III-nitride alloys are calculated for GaNAs, GaNP, and introduced for dilute-anion AlN alloy material systems. Incorporation of small amount of the dilute-anion in III-nitrides allows for a wide tunability of the band gap and electronic properties of the resultant alloys.

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(SL) Semiconductor Lasers

WG2.2 - GAIN PROPERTIES OF TYPE-II ALINN / ZNGEN2 QUANTUM WELLS FOR ULTRAVIOLET LASER DIODES

Presentation Type
Contributed Submission
Authors
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
11:00 AM - 11:15 AM

Abstract

Abstract

The material gain properties of type-II AlInN / ZnGeN2 QWs with different ZnGeN2 layer thicknesses are investigated through the self-consistent k∙p formalism. Our study shows ~6.2 times enhancement in material gain compared to the conventional structure and remarkable reductions in threshold current and carrier densities.

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Presenter Of 1 Presentation

 Conference Calendar
(SL) Semiconductor Lasers

TuG3.3 - INVESTIGATION OF BAND ANTICROSSING PARAMETERS FOR DILUTE-ANION III-NITRIDE ALLOYS

Presentation Type
Contributed Submission
Authors
Date
10/01/2019
Time
01:30 PM - 02:45 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM

Abstract

Abstract

Band anticrossing parameters of dilute-anion III-nitride alloys are calculated for GaNAs, GaNP, and introduced for dilute-anion AlN alloy material systems. Incorporation of small amount of the dilute-anion in III-nitrides allows for a wide tunability of the band gap and electronic properties of the resultant alloys.

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