W. Sun (US) Lehigh University
Lehigh UniversityAuthor Of 1 Presentation
(SL) Semiconductor Lasers
TuG3.2 - ENGINEERING DILUTE-ANION III-NITRIDE FOR LIGHT EMITTERS
Presentation Type
Invited Submission
Authors
Date
10/01/2019
Time
01:30 PM - 02:45 PM
Room
La Vista D/E
Duration
30 Minutes
Lecture Time
02:00 PM - 02:30 PM
Abstract
Abstract
Electronic and optical properties of dilute-anion III-Nitride semiconductors have been investigated and analyzed in recent years, and the findings indicated a strong potential of using dilute-anion III-Nitride materials as a solution towards high efficiency light emitters covering deep ultraviolet and visible light spectral regime.