S. Kamiyama (JP) Meijo University
Meijo UniversityAuthor Of 1 Presentation
(SL) Semiconductor Lasers
WG2.1 - CRYSTAL GROWTH AND OPTICAL PROPERTY OF GAN NANOWIRE CORES AND GAINN/GAN MULTI-QUANTUM SHELLS GROWN BY METALORGANIC VAPOR PHASE EPITAXY
Presentation Type
Invited Submission
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
30 Minutes
Lecture Time
10:30 AM - 11:00 AM
Abstract
Abstract
An arrangement of GaInN/GaN multi-quantum shells (MQSs) and GaN nanowires (NWs) are grown by metalorganic vapor phase epitaxy. For obtaining higher light emission efficiency, an optimal Si doping concentration in the NWs and an AlGaN underlying shell underneath the MQSs were found to be effective.
Presenter Of 1 Presentation
(SL) Semiconductor Lasers
WG2.1 - CRYSTAL GROWTH AND OPTICAL PROPERTY OF GAN NANOWIRE CORES AND GAINN/GAN MULTI-QUANTUM SHELLS GROWN BY METALORGANIC VAPOR PHASE EPITAXY
Presentation Type
Invited Submission
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
30 Minutes
Lecture Time
10:30 AM - 11:00 AM
Abstract
Abstract
An arrangement of GaInN/GaN multi-quantum shells (MQSs) and GaN nanowires (NWs) are grown by metalorganic vapor phase epitaxy. For obtaining higher light emission efficiency, an optimal Si doping concentration in the NWs and an AlGaN underlying shell underneath the MQSs were found to be effective.
Moderator Of 1 Session
10/01/2019
01:30 PM - 02:45 PM
La Vista D/E
Time
01:30 PM - 02:45 PM