Electronic and optical properties of dilute-anion III-Nitride semiconductors have been investigated and analyzed in recent years, and the findings indicated a strong potential of using dilute-anion III-Nitride materials as a solution towards high efficiency light emitters covering deep ultraviolet and visible light spectral regime.
Band anticrossing parameters of dilute-anion III-nitride alloys are calculated for GaNAs, GaNP, and introduced for dilute-anion AlN alloy material systems. Incorporation of small amount of the dilute-anion in III-nitrides allows for a wide tunability of the band gap and electronic properties of the resultant alloys.