10/01/2019
01:30 PM - 02:45 PM
La Vista D/E
Time
01:30 PM - 02:45 PM
(SL) Semiconductor Lasers
TuG3.1 - Development of Ultraviolet-C Laser Diodes
Presentation Type
Invited Submission
Date
10/01/2019
Time
01:30 PM - 02:45 PM
Room
La Vista D/E
Duration
30 Minutes
Lecture Time
01:30 PM - 02:00 PM
(SL) Semiconductor Lasers
TuG3.2 - ENGINEERING DILUTE-ANION III-NITRIDE FOR LIGHT EMITTERS
Presentation Type
Invited Submission
Authors
Date
10/01/2019
Time
01:30 PM - 02:45 PM
Room
La Vista D/E
Duration
30 Minutes
Lecture Time
02:00 PM - 02:30 PM
Abstract
Abstract
Electronic and optical properties of dilute-anion III-Nitride semiconductors have been investigated and analyzed in recent years, and the findings indicated a strong potential of using dilute-anion III-Nitride materials as a solution towards high efficiency light emitters covering deep ultraviolet and visible light spectral regime.
(SL) Semiconductor Lasers
TuG3.3 - INVESTIGATION OF BAND ANTICROSSING PARAMETERS FOR DILUTE-ANION III-NITRIDE ALLOYS
Presentation Type
Contributed Submission
Authors
Date
10/01/2019
Time
01:30 PM - 02:45 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM
Abstract
Abstract
Band anticrossing parameters of dilute-anion III-nitride alloys are calculated for GaNAs, GaNP, and introduced for dilute-anion AlN alloy material systems. Incorporation of small amount of the dilute-anion in III-nitrides allows for a wide tunability of the band gap and electronic properties of the resultant alloys.