An arrangement of GaInN/GaN multi-quantum shells (MQSs) and GaN nanowires (NWs) are grown by metalorganic vapor phase epitaxy. For obtaining higher light emission efficiency, an optimal Si doping concentration in the NWs and an AlGaN underlying shell underneath the MQSs were found to be effective.
The material gain properties of type-II AlInN / ZnGeN2 QWs with different ZnGeN2 layer thicknesses are investigated through the self-consistent k∙p formalism. Our study shows ~6.2 times enhancement in material gain compared to the conventional structure and remarkable reductions in threshold current and carrier densities.
Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials’ optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.
A 1300-nm high-speed high-power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. 5-µm-thick benzocyclobutene was used for planarization to float a coplanar waveguide. Low parasitic capacitance was then formed. 250-µm-long waveguide was fabricated, leading to >28-mW and −3-dB bandwidth of 26 GHz.
Three-section DFB laser was used to compare thermal effect to red shift. Measurement results showed 0.075nm/°C. Simulation results were compared between the measured and calculation of this three-section device.