WG2.1 - CRYSTAL GROWTH AND OPTICAL PROPERTY OF GAN NANOWIRE CORES AND GAINN/GAN MULTI-QUANTUM SHELLS GROWN BY METALORGANIC VAPOR PHASE EPITAXY
Abstract
Abstract
An arrangement of GaInN/GaN multi-quantum shells (MQSs) and GaN nanowires (NWs) are grown by metalorganic vapor phase epitaxy. For obtaining higher light emission efficiency, an optimal Si doping concentration in the NWs and an AlGaN underlying shell underneath the MQSs were found to be effective.
WG2.2 - GAIN PROPERTIES OF TYPE-II ALINN / ZNGEN2 QUANTUM WELLS FOR ULTRAVIOLET LASER DIODES
Abstract
Abstract
The material gain properties of type-II AlInN / ZnGeN2 QWs with different ZnGeN2 layer thicknesses are investigated through the self-consistent k∙p formalism. Our study shows ~6.2 times enhancement in material gain compared to the conventional structure and remarkable reductions in threshold current and carrier densities.
WG2.3 - MONOLITHIC GROWTH OF INAS QUANTUM DOTS LASERS ON (001) SILICON EMITTING AT 1.55 ΜM
- Z. Li (GB) Cardiff University
- S. Shutts (GB) Cardiff University
- C. Allford (GB) Cardiff University
- B. Shi (HK) Hong Kong University of Science and Technology
- W. LUO (CN) Hong Kong University of Science and Technology
- K. LAU (HK) Hong Kong University of Science and Technology
- P. Smowton (GB) Cardiff University
Abstract
Abstract
Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials’ optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.
WG2.4 - HIGH-POWER LONG-WAVEGUIDE 1300-NM DIRECTLY MODULATED DFB LASER FOR 45-GB/S NRZ AND 50-GB/S PAM4
Abstract
Abstract
A 1300-nm high-speed high-power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. 5-µm-thick benzocyclobutene was used for planarization to float a coplanar waveguide. Low parasitic capacitance was then formed. 250-µm-long waveguide was fabricated, leading to >28-mW and −3-dB bandwidth of 26 GHz.
WG2.5 - THERMAL CHARACTERISTICS OF THE THREE-SECTION DISTRIBUTED FEEDBACK LASERS
- C. Huang (TW) Institute of Photonic System, National Chiao Tung University
- H. Shih (TW) Institute of Photonic System, National Chiao Tung University
- S. Chang (TW) Institute of Photonic System, National Chiao Tung University
- S. Hsu (TW) Institute of Photonic System, National Chiao Tung University
- Y. Cheng (TW) Research Center for Applied Sciences
- C. Lin (TW) Industrial Technology Research Institute / National Chiao Tung University
Abstract
Abstract
Three-section DFB laser was used to compare thermal effect to red shift. Measurement results showed 0.075nm/°C. Simulation results were compared between the measured and calculation of this three-section device.