M. Salmon (US) EAG Laboratories-Eurofins Materials Science
EAG Laboratories-Eurofins Materials ScienceAuthor Of 1 Presentation
(SL) Semiconductor Lasers
TuG1.4 - IMPROVING RELIABILITY OF INAS QUANTUM DOT LASERS ON SILICON SUBSTRATES
Presentation Type
Contributed Submission
Authors
- J. Selvidge (US) UC Santa Barbara Materials
- J. Norman (US) University of California, Santa Barbara
- D. Jung (US) University of California, Santa Barbara
- E. Hughes (US) University of California, Santa Barbara
- M. Salmon (US) EAG Laboratories-Eurofins Materials Science
- J. Bowers (US)
- R. Herrick (US) Intel Corporation
- K. Mukherjee (US) UC Santa Barbara Materials
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
09:30 AM - 09:45 AM
Abstract
Abstract
Using correlated electron microscopy techniques, we characterize optoelectronic and structural properties of dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate of recombination enhanced dislocation climb slows noticeably during the aging process from quantum well structures.