Author Of 1 Presentation
OEDDIP - Optical Emitter/Detector Devices and Integrated Photonics
TuE3.2 - MBE GROWTH AND CHARACTERIZATION OF SB-BASED METAMORPHIC IR PHOTODETECTOR STRUCTURES GROWN ON LARGE MISMATCH SUBSTRATES
Presentation Type
Invited Submission
Authors
- S. Nelson (US) IQE
- D. Lubyshev (US) IQE
- J. Fastenau (US) IQE
- M. Kattner (US) IQE
- P. Frey (US) IQE
- A. Liu (US) IQE
- V. Dahiya (US) The Ohio State University
- Z. Taghipour (US) The Ohio State University
- A. Blumer (US) The Ohio State University
- T. Grassman (US) The Ohio State University
- S. Krishna (US) The Ohio State University
Date
08/20/2019
Time
01:15 PM - 03:15 PM
Room
Emerald E
Duration
30 Minutes
Lecture Time
01:45 PM - 02:15 PM
Abstract
Abstract
GaSb-based nBn IR photodetectors were grown by MBE using a metamorphic buffer process on 6-inch diameter GaAs and Si substrates. M-nBn epiwafer characteristics and diode performance, including high quality full FPA imagery, will be presented and compared to the same nBn grown on native GaSb.