The Ohio State University

Author Of 1 Presentation

OEDDIP - Optical Emitter/Detector Devices and Integrated Photonics

TuE3.2 - MBE GROWTH AND CHARACTERIZATION OF SB-BASED METAMORPHIC IR PHOTODETECTOR STRUCTURES GROWN ON LARGE MISMATCH SUBSTRATES

Abstract

Abstract

GaSb-based nBn IR photodetectors were grown by MBE using a metamorphic buffer process on 6-inch diameter GaAs and Si substrates. M-nBn epiwafer characteristics and diode performance, including high quality full FPA imagery, will be presented and compared to the same nBn grown on native GaSb.

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