TuB2.1 - AL RICH ALGAN BASED APDS ON SINGLE CRYSTAL ALN WITH SOLAR BLINDNESS AND ROOM TEMPERATURE OPERATION
- P. Reddy (US) Adroit Materials
- M. Breckenridge (US) North Carolina State University
- A. Klump (US) North Carolina State University
- Q. Guo (US) NCSU
- S. Mita (US) Adroit Materials
- B. Sarkar (US) North Carolina State University
- R. Kirste (US)
- B. Moody (US) Adroit Materials
- J. Tweedie (US) Adroit Materials
- R. Collazo (US) NCSU
- Z. Sitar (US) NCSU
Abstract
Abstract
We demonstrate Al rich AlGaN based APDs grown on AlN substrates capable of high sensitivity at room temperature with ambient lighting rejection showcasing the advantage over Si and Ge based detectors. APDs are operated in linear gain region with maximum gain exceeding 1100.
TuB2.2 - HEXAGONAL BN: RECENT ADVANCES AND POTENTIAL FOR UV OPTOELECTRONICS
Abstract
Abstract
Hexagonal Boron Nitride (hBN) is a wide-bandgap semiconductor with 2-dimensional crystal structure, much like graphene, and highly-compelling properties in the ultra-violet (UV) region. In this presentation, I will review advances in growth and characterization of hBN and discuss potential use in UV optoelectronics applications.
TuB2.3 - ALN SINGLE CRYSTAL SUBSTRATES: A PLATFORM FOR UVC OPTOELECTRONICS
Abstract
Abstract
UVC emitters based on wide bandgap nitride semiconductors are increasingly sought for numerous applications. Lattice-matched, native substrates, ideally suited for these uses, are experiencing steadily increasing demand. The potential of AlN single crystal substrates as a promising platform for UVC optoelectronics will be presented.
TuB2.4 - QUANTUM WELL-WIDTH DEPENDENCE STUDY ON ALGAN BASED UVC LASER
Abstract
Abstract
A study of the well-width impact on the AlGaN laser is presented. The laser threshold and optical gain are significantly influenced by the quantum well design. A low threshold of 5 kw/cm2 is achieved in the 3 nm well width due to a reduced QCSE.
TuB2.5 - DEVELOPMENT OF NEAR UV LASER DIODES
Abstract
Abstract
The development of near UV-laser diodes is presented. This includes growth of relaxed Ga-rich AlGaN layers as well as discussion of the electrical and optical properties of the devices. With the demonstration of optically pumped lasers a pathway toward electrically injected lasing is shown.