OIST - Optical Imaging and Sensing Technology
  • M. Crawford (US) Sandia National Laboratories

TuB2.2 - HEXAGONAL BN: RECENT ADVANCES AND POTENTIAL FOR UV OPTOELECTRONICS

Presentation Type
Invited Submission
Authors
  • M. Crawford (US) Sandia National Laboratories
  • A. Rice (US) Sandia National Laboratories
  • A. Allerman (US) Sandia National Laboratories
  • C. Spataru (US) Sandia National Laboratories
  • T. Beechem (US) Sandia National Laboratories
  • T. Ohta (US) Sandia National Laboratories
Date
08/20/2019
Time
10:15 AM - 12:15 PM
Room
Sandpiper C/D
Duration
30 Minutes
Lecture Time
10:45 AM - 11:15 AM

Abstract

Abstract

Hexagonal Boron Nitride (hBN) is a wide-bandgap semiconductor with 2-dimensional crystal structure, much like graphene, and highly-compelling properties in the ultra-violet (UV) region. In this presentation, I will review advances in growth and characterization of hBN and discuss potential use in UV optoelectronics applications.

Collapse