H. Fu (US) Lehigh University
Lehigh UniversityAuthor Of 1 Presentation
(SL) Semiconductor Lasers
WG2.2 - GAIN PROPERTIES OF TYPE-II ALINN / ZNGEN2 QUANTUM WELLS FOR ULTRAVIOLET LASER DIODES
Presentation Type
Contributed Submission
Authors
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
11:00 AM - 11:15 AM
Abstract
Abstract
The material gain properties of type-II AlInN / ZnGeN2 QWs with different ZnGeN2 layer thicknesses are investigated through the self-consistent k∙p formalism. Our study shows ~6.2 times enhancement in material gain compared to the conventional structure and remarkable reductions in threshold current and carrier densities.
Presenter Of 1 Presentation
(SL) Semiconductor Lasers
WG2.2 - GAIN PROPERTIES OF TYPE-II ALINN / ZNGEN2 QUANTUM WELLS FOR ULTRAVIOLET LASER DIODES
Presentation Type
Contributed Submission
Authors
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
11:00 AM - 11:15 AM
Abstract
Abstract
The material gain properties of type-II AlInN / ZnGeN2 QWs with different ZnGeN2 layer thicknesses are investigated through the self-consistent k∙p formalism. Our study shows ~6.2 times enhancement in material gain compared to the conventional structure and remarkable reductions in threshold current and carrier densities.