Y. Chen (TW) National Sun Yat-sen University
National Sun Yat-sen UniversityAuthor Of 2 Presentations
(PIP) Photonic Integration and Packaging
MD3.3 - IMPROVEMENT OF QUANTUM-WELL INTERMIXING THROUGH ADJUSTING P-DOPED LAYER FOR HIGH-PERFORMANCE SOA-INTEGRATED EAM
Presentation Type
Contributed Submission
Authors
Date
09/30/2019
Time
01:30 PM - 03:00 PM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
02:45 PM - 03:00 PM
Abstract
Abstract
Large p-doping offset layer in a p-i-n heterostructure is proposed for Impurity free vacancy disordering (IFVD) quantum-well-intermixing (QWI) in a SOA-integrated EAM. The P-dopant diffusion during QWI can thus be reduced for performing bandgap engineering, leading to high-speed modulation of 30Gb/s and improving modulation efficiency.
(SL) Semiconductor Lasers
WG2.4 - HIGH-POWER LONG-WAVEGUIDE 1300-NM DIRECTLY MODULATED DFB LASER FOR 45-GB/S NRZ AND 50-GB/S PAM4
Presentation Type
Contributed Submission
Authors
Date
10/02/2019
Time
10:30 AM - 12:00 PM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
11:30 AM - 11:45 AM
Abstract
Abstract
A 1300-nm high-speed high-power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. 5-µm-thick benzocyclobutene was used for planarization to float a coplanar waveguide. Low parasitic capacitance was then formed. 250-µm-long waveguide was fabricated, leading to >28-mW and −3-dB bandwidth of 26 GHz.