Y. Fang (TW) National Sun Yat-sen University
National Sun Yat-sen UniversityAuthor Of 1 Presentation
(PIP) Photonic Integration and Packaging
MD3.3 - IMPROVEMENT OF QUANTUM-WELL INTERMIXING THROUGH ADJUSTING P-DOPED LAYER FOR HIGH-PERFORMANCE SOA-INTEGRATED EAM
Presentation Type
Contributed Submission
Authors
Date
09/30/2019
Time
01:30 PM - 03:00 PM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
02:45 PM - 03:00 PM
Abstract
Abstract
Large p-doping offset layer in a p-i-n heterostructure is proposed for Impurity free vacancy disordering (IFVD) quantum-well-intermixing (QWI) in a SOA-integrated EAM. The P-dopant diffusion during QWI can thus be reduced for performing bandgap engineering, leading to high-speed modulation of 30Gb/s and improving modulation efficiency.