C. Wu (TW) Graduate Institute of Photonics and Optoelectronics, National Taiwan University
Graduate Institute of Photonics and Optoelectronics, National Taiwan UniversityAuthor Of 1 Presentation
(SL) Semiconductor Lasers
WP14 - SIMULATION MODEL OF OXIDE-APERTURE STRAIN QUANTUM WELL VCSEL
Presentation Type
Contributed Submission
Authors
- H. Shih (TW) Institute of Photonic System, National Chiao-Tung University
- Y. Cho (TW) No. 301, Gaofa 3rd Rd, Guiren Dist.
- S. Hsu (TW) Institute of Photonic System, National Chiao Tung University
- Y. Huang (TW) Institute of Photonic System, National Chiao Tung University
- S. Wang (TW) Institute of Photonic System, National Chiao Tung University
- H. Huang (TW) Institute of Photonic System, National Chiao Tung University
- C. Wu (TW) Graduate Institute of Photonics and Optoelectronics, National Taiwan University
- Y. Yeh (TW) Institute of Electro-Optical Engineering, National Chiao-Tung University
- Y. Lu (TW) Institute of Electro-Optical Engineering, National Chiao-Tung University
- H. Kuo (TW) Institute of Electro-Optical Engineering, National Chiao-Tung University
- C. Lin (TW) Industrial Technology Research Institute / National Chiao Tung University
Date
10/02/2019
Time
06:00 PM - 08:00 PM
Room
El Mirador B/C
Lecture Time
06:00 PM - 06:00 PM
Abstract
Abstract
An oxide aperture strained quantum well VCSEL model was built based on measured results. The indium composition of MQW was changed to maximize the frequency response. The simulation result shows that the bandwidth can be improved and reach 30.88GHz.