L. Mawst (US)

Author Of 2 Presentations

 Conference Calendar
Awards

TuB1.2 - Metastable III/V Materials for Semiconductor Lasers

Presentation Type
Invited Submission
Authors
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
El Mirador B
Duration
30 Minutes
Lecture Time
09:00 AM - 09:30 AM

Abstract

Abstract

Metastable materials that lie within the miscibility gaps of their equilibrium phase diagrams, as well as the development of lattice-parameter-engineered virtual substrates, offer means to greatly expand the material platforms available for semiconductor lasers to enable higher performance and an increased span of emission wavelengths.
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(SL) Semiconductor Lasers

WG1.1 - HIGH-POWER MID-INFRARED QUANTUM CASCADE SEMICONDUCTOR LASERS

Presentation Type
Tutorial Submission
Authors
Date
10/02/2019
Time
08:30 AM - 10:00 AM
Room
La Vista D/E
Duration
60 Minutes
Lecture Time
08:30 AM - 09:30 AM

Abstract

Abstract

Watt-range CW powers were achieved over the 3.8-10.8 micron wavelength range. Carrier-leakage suppression and fast carrier extraction allow quantum cascade lasers to reach internal efficiencies near fundamental limits (~ 92 %). Then, CW wall-plug efficiencies ≥ 40 % and powers ≥ 10 W become possible.

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Presenter Of 1 Presentation

 Conference Calendar
Awards

TuB1.2 - Metastable III/V Materials for Semiconductor Lasers

Presentation Type
Invited Submission
Authors
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
El Mirador B
Duration
30 Minutes
Lecture Time
09:00 AM - 09:30 AM

Abstract

Abstract

Metastable materials that lie within the miscibility gaps of their equilibrium phase diagrams, as well as the development of lattice-parameter-engineered virtual substrates, offer means to greatly expand the material platforms available for semiconductor lasers to enable higher performance and an increased span of emission wavelengths.
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