Awards
  • L. Mawst (US)

TuB1.2 - Metastable III/V Materials for Semiconductor Lasers

Presentation Type
Invited Submission
Authors
  • L. Mawst (US)
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
El Mirador B
Duration
30 Minutes
Lecture Time
09:00 AM - 09:30 AM

Abstract

Abstract

Metastable materials that lie within the miscibility gaps of their equilibrium phase diagrams, as well as the development of lattice-parameter-engineered virtual substrates, offer means to greatly expand the material platforms available for semiconductor lasers to enable higher performance and an increased span of emission wavelengths.
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