We report a wavelength-division-multiplexing receiver based on heterogeneous integration of InP-based membrane photodetectors and a SiN arrayed-waveguide-grating demultiplexer on Si, which successfully receives eight-wavelength 56-Gbit/s 4-level pulse-amplitude-modulation signals with bit-error rates of less than 3.8 × 10-3.
We present the hybrid III-V/Si photonic platform developed in CEA-LETI. III-V material is integrated through direct molecular bonding enabling the monolithic integration of light sources. Fabry-Perot laser reference design is used for the process validation. Layout guidelines to improve the thermal behavior are presented.
In this paper we give an overview on our work on silicon photonic high-speed transceivers and the co-integration of III-V opto-electronic components on the silicon photonic platform.
We report the O-band QD-SOA that is directly grown on CMOS compatible silicon substrate. The QD-SOA has a length of 3600 μm, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
We demonstrate a novel PNP bipolar junction transistor based optical phase-shifter on Si-photonic foundry platform. It exhibits a small static power consumption for p phase-shift (Pπ: 3mW), small driving-voltages (Vπ:0.1 V), fast switching time (rise/fall <1.19/0.6ns), and very-low power consumption (0.7mW) during dynamic operations.