MD1.1 - INTEGRATED PAM-4 WDM RECEIVER BY INGAASP-BASED MEMBRANE PDS AND SIN DEMULTIPLEXER ON SI
Abstract
Abstract
We report a wavelength-division-multiplexing receiver based on heterogeneous integration of InP-based membrane photodetectors and a SiN arrayed-waveguide-grating demultiplexer on Si, which successfully receives eight-wavelength 56-Gbit/s 4-level pulse-amplitude-modulation signals with bit-error rates of less than 3.8 × 10-3.
MD1.2 - CMOS COMPATIBLE III-V/SILICON LASER INTEGRATION ON SILICON PHOTONICS PLATFORM
Abstract
Abstract
We present the hybrid III-V/Si photonic platform developed in CEA-LETI. III-V material is integrated through direct molecular bonding enabling the monolithic integration of light sources. Fabry-Perot laser reference design is used for the process validation. Layout guidelines to improve the thermal behavior are presented.
MD1.3 - III-V-ON-SILICON PHOTONIC TRANSCEIVERS
Abstract
Abstract
In this paper we give an overview on our work on silicon photonic high-speed transceivers and the co-integration of III-V opto-electronic components on the silicon photonic platform.
MD1.4 - O-BAND QUANTUM DOT SEMICONDUCTOR OPTICAL AMPLIFIER DIRECTLY GROWN ON CMOS COMPATIBLE SI SUBSTRATE
- S. Liu (US) University of California, Santa Barbara
- J. Norman (US) University of California, Santa Barbara
- M. Dumont (US) University of California, Santa Barbara
- P. Pintus (US) University of California, Santa Barbara
- M. Tran (US) University of California, Santa Barbara
- D. Jung (US) University of California, Santa Barbara
- A. Torres (US) University of California, Santa Barbara
- A. Gossard (US) University of California, Santa Barbara
- J. Bowers (US)
Abstract
Abstract
We report the O-band QD-SOA that is directly grown on CMOS compatible silicon substrate. The QD-SOA has a length of 3600 μm, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
MD1.5 - PNP-TYPE OPTICAL PHASE-SHIFTER WITH LOW POWER CONSUMPTION AND FAST SWITCHING TIME ON SILICON PHOTONICS FOUNDRY PLATFORM
Abstract
Abstract
We demonstrate a novel PNP bipolar junction transistor based optical phase-shifter on Si-photonic foundry platform. It exhibits a small static power consumption for p phase-shift (Pπ: 3mW), small driving-voltages (Vπ:0.1 V), fast switching time (rise/fall <1.19/0.6ns), and very-low power consumption (0.7mW) during dynamic operations.