A. Sabbar (US) Mr
MrAuthor Of 1 Presentation
(PMM) Photonic Materials and Metamaterials
TuD1.2 - COMPARISON STUDY OF HIGH-TEMPERATURE SPONTANEOUS EMISSION QUANTUM EFFICIENCY OF COMMERCIAL LED MATERIALS
Presentation Type
Contributed Submission
Authors
- S. Madhusoodhanan (US) Department of Electrical Engineering, University of Arkansas,
- A. Sabbar (US) Mr
- S. Al-Kabi (US) Department of Electrical Engineering, University of Arkansas,
- B. Dong (CN) 2HC SemiTek (Suzhou), 28 Chenfeng Road, Zhangjiagang, Jiangsu, P. R. 215600, China
- J. Wang (CN) 2HC SemiTek (Suzhou), 28 Chenfeng Road, Zhangjiagang, Jiangsu, P. R. 215600, China
- S. Atcitty (US) 3Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- R. Kaplar (US) Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- H. Mantooth (US) Department of Electrical Engineering, University of Arkansas,
- S. Yu (US) Department of Electrical Engineering, University of Arkansas,
- Z. Chen (US) Department of Electrical Engineering, University of Arkansas,
Date
10/01/2019
Time
08:30 AM - 09:45 AM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
09:00 AM - 09:15 AM
Abstract
Abstract
The spontaneous emission quantum efficiency (QE) of InGaN/GaN MQWs with different wavelengths was studied using photoluminescence (PL) spectroscopy. The QE was calculated in rnage from the power-law relation linking the integrated PL and the excitation pumping
Presenter Of 1 Presentation
(PMM) Photonic Materials and Metamaterials
TuD1.2 - COMPARISON STUDY OF HIGH-TEMPERATURE SPONTANEOUS EMISSION QUANTUM EFFICIENCY OF COMMERCIAL LED MATERIALS
Presentation Type
Contributed Submission
Authors
- S. Madhusoodhanan (US) Department of Electrical Engineering, University of Arkansas,
- A. Sabbar (US) Mr
- S. Al-Kabi (US) Department of Electrical Engineering, University of Arkansas,
- B. Dong (CN) 2HC SemiTek (Suzhou), 28 Chenfeng Road, Zhangjiagang, Jiangsu, P. R. 215600, China
- J. Wang (CN) 2HC SemiTek (Suzhou), 28 Chenfeng Road, Zhangjiagang, Jiangsu, P. R. 215600, China
- S. Atcitty (US) 3Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- R. Kaplar (US) Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- H. Mantooth (US) Department of Electrical Engineering, University of Arkansas,
- S. Yu (US) Department of Electrical Engineering, University of Arkansas,
- Z. Chen (US) Department of Electrical Engineering, University of Arkansas,
Date
10/01/2019
Time
08:30 AM - 09:45 AM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
09:00 AM - 09:15 AM
Abstract
Abstract
The spontaneous emission quantum efficiency (QE) of InGaN/GaN MQWs with different wavelengths was studied using photoluminescence (PL) spectroscopy. The QE was calculated in rnage from the power-law relation linking the integrated PL and the excitation pumping