J. Campbell (US) Univerisity of Virginia
Univerisity of VirginiaAuthor Of 3 Presentations
(PSSI) Photodetectors, Sensors, Systems and Imaging
MC4.1 - HIGH-POWER FLIP-CHIP BONDED PHOTODIODE WORKING AT 1064NM
Presentation Type
Contributed Submission
Authors
Date
09/30/2019
Time
03:30 PM - 05:00 PM
Room
El Mirador C East
Duration
15 Minutes
Lecture Time
03:30 PM - 03:45 PM
Abstract
Abstract
We demonstrate back-illuminated flip-chip-bonded modified uni-traveling carrier photodiodes for 1064 nm. The bandwidth is 40 GHz and the RF output power is 23.5 dBm at 25 GHz. The photodiode has responsivity of 0.46 A/W at 1064 nm and dark current of 2 nA at -8 V.
(PSSI) Photodetectors, Sensors, Systems and Imaging
PD3 - ALXIN1-XASYSB1-Y SEPARATE ABSORPTION, CHARGE, AND MULTIPLICATION AVALANCHE PHOTODIODES FOR 2-μM DETECTION
Presentation Type
Post-Deadline
Authors
Date
10/03/2019
Time
10:30 AM - 12:00 PM
Room
Salon del Ray C
Duration
10 Minutes
Lecture Time
10:50 AM - 11:00 AM
(PMM) Photonic Materials and Metamaterials
TuD1.1 - DIGITAL ALLOY AVALANCHE PHOTODIODES
Presentation Type
Invited Submission
Date
10/01/2019
Time
08:30 AM - 09:45 AM
Room
El Mirador C West
Duration
30 Minutes
Lecture Time
08:30 AM - 09:00 AM
Abstract
Abstract
Recently, using AlxIn1-xAsySb1-y grown as a digital alloy we have demonstrated APDs with noise as low as Si at telecommunication wavelengths (1300 nm to 1550 nm). In this paper, we a noise suppression mechanism in digital alloys.
Presenter Of 1 Presentation
(PMM) Photonic Materials and Metamaterials
TuD1.1 - DIGITAL ALLOY AVALANCHE PHOTODIODES
Presentation Type
Invited Submission
Date
10/01/2019
Time
08:30 AM - 09:45 AM
Room
El Mirador C West
Duration
30 Minutes
Lecture Time
08:30 AM - 09:00 AM
Abstract
Abstract
Recently, using AlxIn1-xAsySb1-y grown as a digital alloy we have demonstrated APDs with noise as low as Si at telecommunication wavelengths (1300 nm to 1550 nm). In this paper, we a noise suppression mechanism in digital alloys.