K. Sun (US) Univerisity of Virginia, Electrical and Computer Engineering
Univerisity of Virginia Electrical and Computer EngineeringAuthor Of 2 Presentations
(PSSI) Photodetectors, Sensors, Systems and Imaging
MC4.1 - HIGH-POWER FLIP-CHIP BONDED PHOTODIODE WORKING AT 1064NM
Presentation Type
Contributed Submission
Authors
Date
09/30/2019
Time
03:30 PM - 05:00 PM
Room
El Mirador C East
Duration
15 Minutes
Lecture Time
03:30 PM - 03:45 PM
Abstract
Abstract
We demonstrate back-illuminated flip-chip-bonded modified uni-traveling carrier photodiodes for 1064 nm. The bandwidth is 40 GHz and the RF output power is 23.5 dBm at 25 GHz. The photodiode has responsivity of 0.46 A/W at 1064 nm and dark current of 2 nA at -8 V.
(PSSI) Photodetectors, Sensors, Systems and Imaging
WE1.2 - GE-ON-SI BALANCED PERIODIC TRAVELING-WAVE PHOTODETECTOR
Presentation Type
Contributed Submission
Authors
Date
10/02/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:00 AM - 09:15 AM
Abstract
Abstract
A balanced P-TWPD on SOI is demonstrated for the first time. The device composed of 8 Ge photodiodes delivers powers of 8.3 dBm at 5 GHz and 2.6 dBm at 25 GHz. The internal responsivity is 0.84 A/W. The CMRR is larger than 30 dB.
Presenter Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
WE1.2 - GE-ON-SI BALANCED PERIODIC TRAVELING-WAVE PHOTODETECTOR
Presentation Type
Contributed Submission
Authors
Date
10/02/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:00 AM - 09:15 AM
Abstract
Abstract
A balanced P-TWPD on SOI is demonstrated for the first time. The device composed of 8 Ge photodiodes delivers powers of 8.3 dBm at 5 GHz and 2.6 dBm at 25 GHz. The internal responsivity is 0.84 A/W. The CMRR is larger than 30 dB.