J. Zang (US) Univerisity of Virginia
Univerisity of VirginiaAuthor Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
MC4.1 - HIGH-POWER FLIP-CHIP BONDED PHOTODIODE WORKING AT 1064NM
Presentation Type
Contributed Submission
Authors
Date
09/30/2019
Time
03:30 PM - 05:00 PM
Room
El Mirador C East
Duration
15 Minutes
Lecture Time
03:30 PM - 03:45 PM
Abstract
Abstract
We demonstrate back-illuminated flip-chip-bonded modified uni-traveling carrier photodiodes for 1064 nm. The bandwidth is 40 GHz and the RF output power is 23.5 dBm at 25 GHz. The photodiode has responsivity of 0.46 A/W at 1064 nm and dark current of 2 nA at -8 V.