Auger recombination and inter-valence band absorption losses can be suppressed in Bi-containing III-V semiconductors, which may lead to highly efficient of infrared lasers. This talk will describe the growth of these alloys, which is hampered by low Bi solubility, droplet formation, compositional inhomogeneities, and ordering.
GaSb-based nBn IR photodetectors were grown by MBE using a metamorphic buffer process on 6-inch diameter GaAs and Si substrates. M-nBn epiwafer characteristics and diode performance, including high quality full FPA imagery, will be presented and compared to the same nBn grown on native GaSb.
Bandgap and carrier dispersion in metamorphic superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. Application of strain engineering gives an additional powerful tool for creating new quantum materials based on InAsSb.
In this presentation, we will discuss the advantages of using an in-pixel digital read out integrated circuit and metasurface resonator pixel technology with the type-II strained layer superlattice detector array to elevate the operating temperature of the focal plane array for Earth remote sensing applications.