K. Guneshekharan (IN) Indian Institute of Science
Indian Institute of ScienceAuthor Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
ThE1.1 - INVESTIGATIONS ON HI REDUCED GRAPHENE BASED FET FOR PHOTON DETECTION
Presentation Type
Contributed Submission
Authors
Date
10/03/2019
Time
08:30 AM - 09:45 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
08:30 AM - 08:45 AM
Abstract
Abstract
Reduced graphene oxide-based field effect transistor is fabricated and tested for detection of UV photons in 100-280 nm range. A novel technique is used for reduction of Graphene oxide. The fabricated device showed promising response to UV photons in terms of resistance change in rGO