A. Pandey (US) EECS, University of Michigan, Ann Arbor
EECS, University of Michigan, Ann ArborAuthor Of 2 Presentations
(OMND) Optical Micro / Nano Resonators and Devices
ME2.3 - ULTRA-HIGH-Q MICRORING RESONATORS USING SINGLE CRYSTAL ALUMINUM NITRIDE ON SAPPHIRE PLATFORM
Presentation Type
Contributed Submission
Authors
- Y. Sun (US) University of Michigan
- D. Laleyan (US) University of Michigan
- E. Reid (US) University of Michigan
- P. Wang (US) University of Michigan
- X. Liu (US) University of Michigan
- A. Pandey (US) EECS, University of Michigan, Ann Arbor
- M. Soltani (US) Raytheon BBN Technologies
- Z. Mi (US) EECS, University of Michigan, Ann Arbor
Date
09/30/2019
Time
10:30 AM - 12:00 PM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
11:30 AM - 11:45 AM
Abstract
Abstract
We report the demonstration of ultra-high Q (>2.5 ×106) ring resonators made of fully-etched single crystal aluminum nitride waveguides on sapphire substrate, at 1550nm wavelength, enabling a new class of compact classical/quantum photonic devices.
(SS LDNP) Special Symposium on Low Dimensional and Nanostructured Photonics
ThF1.3 - HIGH-EFFICIENCY ALGAN TUNNEL JUNCTION DEEP ULTRAVIOLET LEDS OPERATING AT 265 NM
Presentation Type
Contributed Submission
Authors
- A. Pandey (US) EECS, University of Michigan, Ann Arbor
- W. Shin (US) EECS, University of Michigan, Ann Arbor
- J. Gim (US) Department of Materials Science and Engineering, University of Michigan
- R. Hovden (US) Department of Materials Science and Engineering, University of Michigan
- Z. Mi (US) EECS, University of Michigan, Ann Arbor
Date
10/03/2019
Time
08:30 AM - 09:45 AM
Room
La Vista C
Duration
15 Minutes
Lecture Time
09:15 AM - 09:30 AM
Abstract
Abstract
Tunnel-injected deep ultraviolet LEDs using a ~2.5 nm GaN tunnel junction, with emission peak at 265 nm have been demonstrated with a maximum external quantum efficiency reaching ~8% and wall plug efficiency reaching ~4.5%.
Presenter Of 1 Presentation
(SS LDNP) Special Symposium on Low Dimensional and Nanostructured Photonics
ThF1.3 - HIGH-EFFICIENCY ALGAN TUNNEL JUNCTION DEEP ULTRAVIOLET LEDS OPERATING AT 265 NM
Presentation Type
Contributed Submission
Authors
- A. Pandey (US) EECS, University of Michigan, Ann Arbor
- W. Shin (US) EECS, University of Michigan, Ann Arbor
- J. Gim (US) Department of Materials Science and Engineering, University of Michigan
- R. Hovden (US) Department of Materials Science and Engineering, University of Michigan
- Z. Mi (US) EECS, University of Michigan, Ann Arbor
Date
10/03/2019
Time
08:30 AM - 09:45 AM
Room
La Vista C
Duration
15 Minutes
Lecture Time
09:15 AM - 09:30 AM
Abstract
Abstract
Tunnel-injected deep ultraviolet LEDs using a ~2.5 nm GaN tunnel junction, with emission peak at 265 nm have been demonstrated with a maximum external quantum efficiency reaching ~8% and wall plug efficiency reaching ~4.5%.