III-V semiconductor nanowires have been demonstrated as potential candidates for infrared photodetection due to their unique morphology, optical and electrical properties as well as direct and tunable bandgap. Here our study on the fabrication and characterization of III-V nanowire infrared photodetectors is reviewed.
Advances in III-V semiconductor type-II superlattice infrared material and the advent of the unipolar barrier infrared detector device architecture have led to high-performance infrared detectors and focal planes arrays for imaging and spectral imaging applications.
Molecular dynamics modeling of epitaxial growth provides insights relating growth processes to the spectral absorption and charge carrier lifetimes of Ga-free Type-II superlattices. Guided by the growth modeling, epitaxial process modifications were implemented that resulted in Type-II superlattices with improved spectral and carrier transport characteristics.
II-VI colloidal quantum dots (CQDs) have made significant technological advances including the world’s first MWIR imaging. The ultra-low costs associated with fabrication make CQDs a very promising infrared sensing technology. We will discuss our recent progress developing low cost CQD infrared focal plane arrays.