B. Haq (BE) Ghent University
Ghent UniversityAuthor Of 1 Presentation
(SL) Semiconductor Lasers
TuG1.2 - MICRO-TRANSFER-PRINTED III-V-ON-SILICON C-BAND SOAS WITH 17 DB GAIN
Presentation Type
Contributed Submission
Authors
- B. Haq (BE) Ghent University
- S. Kumari (BE) Ghent University - imec
- J. Zhang (BE) Ghent University - imec
- K. Gasse (BE) Ghent University - imec
- A. Gocalinska (IE) Tyndall National Institute
- E. Pelucchi (IE) Tyndall National Institute
- B. Corbett (IE) Tyndall National Institute
- G. Roelkens (BE) Ghent University - imec
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
09:00 AM - 09:15 AM
Abstract
Abstract
In this paper, we demonstrate the integration of a pre-fabricated semiconductor optical amplifiers on a silicon photonic integrated circuit through micro-transfer-printing. 17 dB small signal gain is obtained from the 1.35 mm long device.
Presenter Of 1 Presentation
(SL) Semiconductor Lasers
TuG1.2 - MICRO-TRANSFER-PRINTED III-V-ON-SILICON C-BAND SOAS WITH 17 DB GAIN
Presentation Type
Contributed Submission
Authors
- B. Haq (BE) Ghent University
- S. Kumari (BE) Ghent University - imec
- J. Zhang (BE) Ghent University - imec
- K. Gasse (BE) Ghent University - imec
- A. Gocalinska (IE) Tyndall National Institute
- E. Pelucchi (IE) Tyndall National Institute
- B. Corbett (IE) Tyndall National Institute
- G. Roelkens (BE) Ghent University - imec
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista D/E
Duration
15 Minutes
Lecture Time
09:00 AM - 09:15 AM
Abstract
Abstract
In this paper, we demonstrate the integration of a pre-fabricated semiconductor optical amplifiers on a silicon photonic integrated circuit through micro-transfer-printing. 17 dB small signal gain is obtained from the 1.35 mm long device.