O. Salehzadeh (CA) National Research Council Canada
National Research Council CanadaAuthor Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
TuE1.4 - EDGE BREAKDOWN SUPPRESSION OF AVALANCHE PHOTODIODES USING ZN DIFFUSION AND SELECTIVE AREA GROWTH
Presentation Type
Contributed Submission
Authors
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:15 AM - 09:30 AM
Abstract
Abstract
Avalanche photodiodes are fabricated and characterized, using a single diffusion fabrication process with the surface patterned by selective area growth prior to diffusion. Raster mapping of the photocurrent near the breakdown voltage is used to characterize the electric field distribution in the multiplication layer.