N. Alfaraj (SA) King Abdullah University of Science and Technology
King Abdullah University of Science and TechnologyAuthor Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
MC4.3 - DEEP-ULTRAVIOLET Β-GA2O3 PHOTODETECTORS GROWN ON MGO SUBSTRATES WITH A TIN TEMPLATE
Presentation Type
Contributed Submission
Authors
- K. Li (SA) King Abdullah University of Science and Technology
- N. Alfaraj (SA) King Abdullah University of Science and Technology
- C. Kang (SA) King Abdullah University of Science and Technology
- L. Braic (SA) King Abdullah University of Science and Technology
- N. Zoita (SA) National Institute for Optoelectronics
- A. Kiss (RO) National Institute for Optoelectronics
- T. Ng (SA) King Abdullah University of Science and Technology
- B. Ooi (SA) King Abdullah University of Science and Technology
Date
09/30/2019
Time
03:30 PM - 05:00 PM
Room
El Mirador C East
Duration
15 Minutes
Lecture Time
04:00 PM - 04:15 PM
Abstract
Abstract
This work investigates β-Ga2O3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15 V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure exhibited a 213.75% peak-responsivity increase at 15 V reverse-bias.
Presenter Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
MC4.3 - DEEP-ULTRAVIOLET Β-GA2O3 PHOTODETECTORS GROWN ON MGO SUBSTRATES WITH A TIN TEMPLATE
Presentation Type
Contributed Submission
Authors
- K. Li (SA) King Abdullah University of Science and Technology
- N. Alfaraj (SA) King Abdullah University of Science and Technology
- C. Kang (SA) King Abdullah University of Science and Technology
- L. Braic (SA) King Abdullah University of Science and Technology
- N. Zoita (SA) National Institute for Optoelectronics
- A. Kiss (RO) National Institute for Optoelectronics
- T. Ng (SA) King Abdullah University of Science and Technology
- B. Ooi (SA) King Abdullah University of Science and Technology
Date
09/30/2019
Time
03:30 PM - 05:00 PM
Room
El Mirador C East
Duration
15 Minutes
Lecture Time
04:00 PM - 04:15 PM
Abstract
Abstract
This work investigates β-Ga2O3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15 V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure exhibited a 213.75% peak-responsivity increase at 15 V reverse-bias.