Z. Deng (CN) ShanghaiTech University
ShanghaiTech UniversityAuthor Of 1 Presentation
(PSSI) Photodetectors, Sensors, Systems and Imaging
TuE1.6 - CHARACTERIZATION OF DEEP LEVELS IN INP BASED INGAASBI PHOTODETECTOR
Presentation Type
Contributed Submission
Authors
- J. Huang (CN) ShanghaiTech University
- B. Chen (CN) ShanghaiTech University
- Z. Deng (CN) ShanghaiTech University
- Y. Gu (CN) Shanghai Institute of Microsystem and Information Technology
- Y. Ma (CN) Shanghai Institute of Microsystem and Information Technology
- J. Zhang (CN) Shanghai Institute of Microsystem and Information Technology
- X. Chen (CN) Shanghai Institute of Technical Physics
- J. Shao (CN) Shanghai Institute of Technical Physics
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:45 AM - 10:00 AM
Abstract
Abstract
In this work, low frequency noise spectroscopy and temperature varied photoluminescence was used to characterize the defect levels in InGaAsBi photodetector. Both of these independent techniques have found some deep levels, and some of which are the consistent.