Author Of 1 Presentation
OEDDIP - Optical Emitter/Detector Devices and Integrated Photonics
TuE3.1 - GROWTH OF BI-CONTAINING III-V COMPOUND SEMICONDUCTORS
Presentation Type
Invited Submission
Authors
Date
08/20/2019
Time
01:15 PM - 03:15 PM
Room
Emerald E
Duration
30 Minutes
Lecture Time
01:15 PM - 01:45 PM
Abstract
Abstract
Auger recombination and inter-valence band absorption losses can be suppressed in Bi-containing III-V semiconductors, which may lead to highly efficient of infrared lasers. This talk will describe the growth of these alloys, which is hampered by low Bi solubility, droplet formation, compositional inhomogeneities, and ordering.