Author Of 1 Presentation
OEDDIP - Optical Emitter/Detector Devices and Integrated Photonics
TuE3.3 - Quantum Materials Based on Metamorphic InAsSb
Presentation Type
Invited Submission
Authors
- S. Suchalkin (US) State University of New York at Stony Brook, Stony Brook
- G. Belenky (US) State University of New York at Stony Brook
- M. Ermolaev (US) State University of New York at Stony Brook
- B. Laikhtman (IL) Racah Institute of Physics, Hebrew University
- G. Kipshidze (US) State University of New York at Stony Brook
- D. Smirnov (US) Florida State University
- S. Moon (US) Florida State University
- T. Valla (US) Brookhaven National Laboratory
- S. Svensson (US) CCDC Army Research Laboratory
- W. Sarney (US) CCDC Army Research Laboratory
Date
08/20/2019
Time
01:15 PM - 03:15 PM
Room
Emerald E
Duration
30 Minutes
Lecture Time
02:15 PM - 02:45 PM
Abstract
Abstract
Bandgap and carrier dispersion in metamorphic superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. Application of strain engineering gives an additional powerful tool for creating new quantum materials based on InAsSb.